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| MITSUBISHI IGBT MODULES CM600DU-5F HIGH POWER SWITCHING USE CM600DU-5F IC ................................................................... 600A VCES ............................................................ 250V Insulated Type 2-elements in a pack APPLICATION AC moter controll of forklift (battery power source) OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point 110 E2 G2 62 0.25 6 C2E1 E2 C1 15 (8.25) (18.5) C2E1 E2 C1 4-6.5 MOUNTING HOLES 3-M6 NUTS 25 93 0.25 18 14 7 18 14 7 18 14 4 2.8 25 21.5 2.5 18.25 CIRCUIT DIAGRAM 0.5 0.5 7.5 8.5 0.5 0.5 29 +1.0 -0.5 21 LABEL G1 E1 G1 E1 CM 6 80 E2 G2 Feb. 2009 4 MITSUBISHI IGBT MODULES CM600DU-5F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25C, unless otherwise specified) Symbol VCES VGES IC IC(rms) ICM IE (Note 1) IE(rms) (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current G-E Short C-E Short TC = 25C Pulse Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight TC = 25C Pulse TC = 25C (Note 2) (Note 2) Conditions Ratings 250 20 600 350 1200 600 350 1200 1100 -40 ~ +150 -40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 Unit V V A A(rms) A A A(rms) A W C C Vrms N*m N*m g Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 resistance*3 Test conditions VCE = VCES, VGE = 0V IC = 60mA, VCE = 10V VGE = VGES, VCE = 0V IC = 600A, VGE = 10V VCE = 10V VGE = 0V VCC = 100V, IC = 600A, VGE = 10V VCC = 100V, IC = 600A VGE = 10V RG = 4.2, Inductive load IE = 600A IE = 600A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1/2 module) Case temperature measured point is just under the chips Tj = 25C Tj = 125C Min. -- 3.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ. -- 4.0 -- 1.2 1.1 -- -- -- 2200 -- -- -- -- -- 20.0 -- -- -- 0.02 -- Max. 1 5.0 0.5 1.7 -- 170 11 5.7 -- 850 600 1100 500 300 -- 2 0.11 0.20 -- 0.05 Unit mA V A V nF nC ns ns C V Contact thermal resistance Thermal K/W Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM600DU-5F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 1200 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 1200 COLLECTOR CURRENT (A) Tj = 25C VGE = 1000 15V 10 800 8 600 400 200 0 6.5 6.25 VCE = 10V Tj = 25C 1000 Tj = 125C 800 600 400 200 0 6 5.75 5.5 5.25 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 Tj = 25C 2 VGE = 10V Tj = 25C Tj = 125C 1.6 8 1.2 6 0.8 4 IC = 600A 0.4 2 IC = 1200A IC = 240A 0 0 200 400 600 800 1000 1200 0 0 2 4 6 8 10 12 14 16 18 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104 CAPACITANCE Cies, Coes, Cres (nF) EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 103 7 5 3 2 Tj = 25C Cies 103 7 5 3 2 102 7 5 3 2 102 7 5 3 2 101 7 5 3 2 Coes 101 0.6 0.8 1 1.2 1.4 1.6 1.8 Cres VGE = 0V 100 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2009 EMITTER-COLLECTOR VOLTAGE VEC (V) 3 MITSUBISHI IGBT MODULES CM600DU-5F HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 td(off) td(on) tf REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 3 2 SWITCHING TIMES (ns) 3 2 trr Irr 102 7 5 3 2 tr Conditions: VCC = 100V VGE = 10V RG = 4.2 Tj = 125C Inductive load 2 3 5 7 102 2 3 5 7 103 102 7 5 3 2 101 1 10 101 1 10 Conditions: VCC = 100V VGE = 10V RG = 4.2 Tj = 25C Inductive load 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j-c) = 0.11K/W 3 FWDi part: 2 Per unit base = Rth(j-c) = 0.20K/W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 600A 16 VCC = 50V NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) 12 VCC = 100V 10-1 10-1 7 5 3 2 7 5 3 2 8 10-2 10-2 Single Pulse TC = 25C 4 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) 0 0 500 1000 2000 3000 4000 1500 2500 3500 4500 GATE CHARGE QG (nC) Feb. 2009 4 |
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